-
Si PIN-фотодиод S1223-01
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.52 A/W Dark current (max.) 10000 pA Cutoff frequency (typ.) 20 MHz Terminal capacitance (typ.) 20 […]
-
Si PIN-фотодиод S13337-01
Технические характеристики Photosensitive area φ0.8 mm Number of elements 1 Package Glass epoxy Package category Surface mount type Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 800 nm Photosensitivity (typ.) 0.57 A/W Dark current (max.) 500 pA Cutoff frequency (typ.) 500 MHz Terminal capacitance (typ.) […]
-
Si PIN-фотодиод S13993
Технические характеристики Photosensitive area 10 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 100 V Dark current (max.) 6000 pA Cutoff frequency (typ.) 40 MHz Terminal capacitance (typ.) 40 pF Measurement condition Typ. Ta=25 ℃, Dark current: VR=70 mV, Terminal capacitance: VR=70 V, f=10 kHz, unless otherwise noted
-
Si PIN-фотодиод S14605
Технические характеристики Photosensitive area 9 × 9 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 150 V Dark current (max.) 30000 pA Cutoff frequency (typ.) 20 MHz Terminal capacitance (typ.) 25 pF Measurement condition Typ. Ta=25 ℃, Dark current: VR=100 mV, Terminal capacitance: VR=100 V, f=10 kHz, unless otherwise noted
-
Si PIN-фотодиод S15137
Технические характеристики Photosensitive area φ5.0 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 150 V Spectral response range 360 to 1120 nm Peak sensitivity wavelength (typ.) 1000 nm Photosensitivity (typ.) 0.57 A/W Dark current (max.) 10000 pA Rise time (typ.) 0.0125 μs Terminal capacitance (typ.) 10 pF Measurement […]
-
Si PIN-фотодиод S15158
Технические характеристики Element size (per 1 element) 0.7 × 2.0 mm Number of elements 16 Package Glass epoxy Package category Surface mount Scintillator type None Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 380 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.63 A/W Dark current (max.) 10000 pA Terminal […]
-
Si PIN-фотодиод S2744-09
Технические характеристики Photosensitive area 20 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 100 V Spectral response range 340 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.66 A/W Dark current (max.) 10000 pA Cutoff frequency (typ.) 25 MHz Terminal capacitance (typ.) 85 pF Noise equivalent […]
-
Si PIN-фотодиод S3071
Технические характеристики Photosensitive area φ5 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 50 V Spectral response range 320 to 1060 nm Peak sensitivity wavelength (typ.) 920 nm Photosensitivity (typ.) 0.54 A/W Dark current (max.) 10000 pA Cutoff frequency (typ.) 40 MHz Terminal capacitance (typ.) 18 pF Noise […]
-
Si PIN-фотодиод S3399
Технические характеристики Photosensitive area φ3 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 840 nm Photosensitivity (typ.) 0.58 A/W Dark current (max.) 1000 pA Cutoff frequency (typ.) 100 MHz Terminal capacitance (typ.) 20 pF Noise […]
-
Si PIN-фотодиод S3590-19
Технические характеристики Photosensitive area 10 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 100 V Spectral response range 340 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.58 A/W Dark current (max.) 10000 pA Cutoff frequency (typ.) 40 MHz Terminal capacitance (typ.) 40 pF Noise equivalent […]
-
Si PIN-фотодиод S6967
Технические характеристики Photosensitive area 5.5 × 4.8 mm Number of elements 1 Package Plastic Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1060 nm Peak sensitivity wavelength (typ.) 900 nm Photosensitivity (typ.) 0.65 A/W Dark current (max.) 5000 pA Cutoff frequency (typ.) 50 MHz Terminal capacitance (typ.) 50 pF Noise equivalent […]
-
Si PIN-фотодиод S7509
Технические характеристики Photosensitive area 10 × 2 mm Number of elements 1 Package Ceramic Package category Surface mount type Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.72 A/W Dark current (max.) 5000 pA Cutoff frequency (typ.) 20 MHz Terminal capacitance […]
-
Si PIN-фотодиод S9055
Технические характеристики Photosensitive area φ0.2 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 700 nm Photosensitivity (typ.) 0.25 A/W Dark current (max.) 100 pA Cutoff frequency (typ.) 1500 MHz Terminal capacitance (typ.) 0.8 pF Measurement […]
-
Si PIN-фотодиод S9055-01
Технические характеристики Photosensitive area φ0.1 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 700 nm Photosensitivity (typ.) 0.25 A/W Dark current (max.) 100 pA Cutoff frequency (typ.) 2000 MHz Terminal capacitance (typ.) 0.5 pF Measurement […]
-
Si PIN-фотодиод S9195
Технические характеристики Photosensitive area 5 × 5 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 840 nm Photosensitivity (typ.) 0.28 A/W Dark current (max.) 5000 pA Cutoff frequency (typ.) 50 MHz Terminal capacitance (typ.) 60 […]
-
Si PIN-фотодиодная матрица S3096-02
Технические характеристики Number of elements 2-segment Package Plastic Cooling Non-cooled Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.58 A/W Dark current (max.) 500 pA Cutoff frequency (typ.) 25 MHz Terminal capacitance (typ.) 5 pF Measurement condition Typ. Ta=25 ℃, per one element (except for photosensitive area), unless […]
-
Si PIN-фотодиодная матрица S5870
Технические характеристики Number of elements 2-segment Package Ceramic Package category Surface mount type Cooling Non-cooled Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.72 A/W Dark current (max.) 10000 pA Cutoff frequency (typ.) 10 MHz Terminal capacitance (typ.) 50 pF Measurement condition Typ. Ta=25 ℃, per one element […]
-
Si PIN-фотодиодная матрица S5981
Технические характеристики Number of elements 4-segment Package Ceramic Package category Surface mount type Cooling Non-cooled Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.72 A/W Dark current (max.) 4000 pA Cutoff frequency (typ.) 20 MHz Terminal capacitance (typ.) 35 pF Measurement condition Typ. Ta=25 ℃, per one element […]
-
Si PIN-фотодиодная матрица S9345
Технические характеристики Number of elements 2-segment Package Plastic Package category Surface mount type Cooling Non-cooled Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.55 A/W Dark current (max.) 5000 pA Cutoff frequency (typ.) 15 MHz Measurement condition Typ. Ta=25 ℃, per one element (except for photosensitive area), unless […]
-
Si фотодиод S1226-18BQ
Технические характеристики Photosensitive area 1.1 × 1.1 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 2 pA Rise time (typ.) 0.15 μs Terminal capacitance (typ.) 35 […]
-
Si фотодиод S1226-44BQ
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 10 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 500 […]
-
Si фотодиод S1226-8BQ
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 20 pA Rise time (typ.) 2 μs Terminal capacitance (typ.) 1200 […]
-
Si фотодиод S1227-1010BQ
Технические характеристики Photosensitive area 10 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 50 pA Rise time (typ.) 7 μs Terminal capacitance (typ.) 3000 pF Noise equivalent […]
-
Si фотодиод S1227-16BQ
Технические характеристики Photosensitive area 5.9 × 1.1 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 5 pA Rise time (typ.) 0.5 μs Terminal capacitance (typ.) 170 pF Noise equivalent […]
-
Si фотодиод S1227-66BR
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 340 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.43 A/W Dark current (max.) 20 pA Rise time (typ.) 2 μs Terminal capacitance (typ.) 950 pF Noise equivalent […]
-
Si фотодиод S12497
Технические характеристики Photosensitive area 9.5 × 9.5 mm Number of elements 1 Package PWB with pins Cooling Non-cooled Reverse voltage (max.) 10 V Spectral response range 400 to 1100 nm Peak sensitivity wavelength (typ.) 920 nm Photosensitivity (typ.) 0.57 A/W Dark current (max.) 200 pA Rise time (typ.) 15 μs Terminal capacitance (typ.) 950 pF […]
-
Si фотодиод S12698
Технические характеристики Photosensitive area 1.1 × 1.1 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 800 nm Photosensitivity (typ.) 0.38 A/W Dark current (max.) 10 pA Rise time (typ.) 0.1 μs Terminal capacitance (typ.) 25 […]
-
Si фотодиод S12698-01
Технические характеристики Photosensitive area 2.4 × 2.4 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 800 nm Photosensitivity (typ.) 0.38 A/W Dark current (max.) 30 pA Rise time (typ.) 0.5 μs Terminal capacitance (typ.) 230 […]
-
Si фотодиод S12742-220
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 216 to 224 nm Peak sensitivity wavelength (typ.) 220 nm Photosensitivity (typ.) 0.006 A/W Dark current (max.) 25 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 500 pF Noise equivalent […]
-
Si фотодиод S12742-254
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 252 to 256 nm Peak sensitivity wavelength (typ.) 254 nm Photosensitivity (typ.) 0.018 A/W Dark current (max.) 25 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 500 pF Noise equivalent […]
-
Si фотодиод S12915-1010R
Технические характеристики
-
Si фотодиод S1336-44BQ
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 50 pA Rise time (typ.) 0.5 μs Terminal capacitance (typ.) 150 […]
-
Si фотодиод S1336-8BQ
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 100 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 380 […]
-
Si фотодиод S1337-1010BQ
Технические характеристики Photosensitive area 10 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 200 pA Rise time (typ.) 3 μs Terminal capacitance (typ.) 1100 pF Noise equivalent […]
-
Si фотодиод S1337-66BQ
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 100 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 380 pF Noise equivalent […]
-
Si фотодиод S8193
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Dark current (max.) 50 pA Terminal capacitance (typ.) 950 pF
-
Si фотодиод с предусилителем S8745-01
Технические характеристики Photosensitive area 2.4 × 2.4 mm Number of elements 1 Package Metal Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Noise equivalent power (typ.) 11×10-15 W/Hz1/2 Measurement condition Typ. Ta=25 ℃, VCC=±15 V, RL=1 MΩ, Photosensitivity: λ=λp, Noise equivalent power: λ=λp, […]
-
Si фотодиод с предусилителем S8745-06
Технические характеристики Photosensitive area 2.4 × 2.4 mm Number of elements 1 Package Metal Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 340 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Noise equivalent power (typ.) 8×10-15 W/Hz1/2 Measurement condition Typ. Ta=25 ℃, VCC=±15 V, RL=1 MΩ, Photosensitivity: λ=λp, Noise equivalent power: λ=λp, […]
-
Si фотодиод С1226-8БК
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 20 pA Rise time (typ.) 2 μs Terminal capacitance (typ.) 1200 […]
-
Si фотодиод С1336-18БК
Технические характеристики Photosensitive area 1.1 × 1.1 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 20 pA Rise time (typ.) 0.1 μs Terminal capacitance (typ.) 20 […]
-
Si фотодиод С1336-8БК
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 100 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 380 […]
-
Si фотодиод С2386-18Л
Технические характеристики Photosensitive area 1.1 × 1.1 mm Number of elements 1 Package Metal Package category TO-18, with lens Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.6 A/W Dark current (max.) 2 pA Rise time (typ.) 0.4 μs Terminal capacitance […]
-
Si фотодиод С2387-16Р
Технические характеристики
-
Si фотодиод С2387-33Р
Технические характеристики
-
Si фотодиодная матрица S13620-02
Технические характеристики Element size (per 1 element) 2.5 × 2.5 mm Number of elements 64 Package Glass epoxy Package category Unsealed Scintillator type None Cooling Non-cooled Reverse voltage (max.) 10 V Spectral response range 400 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.61 A/W Dark current (max.) 300 pA Rise time […]
-
Si фотодиодная матрица S4114-46Q
Технические характеристики Element size (per 1 element) 0.9 × 4.4 mm Number of elements 46 Package Ceramic Package category 48-pin DIP Scintillator type None Cooling Non-cooled Reverse voltage (max.) 15 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 800 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 60 pA Rise time […]
-
Г12180-250A фотодиод InGaAs типа PIN
Характеристики: Низкий уровень шума и маленький темновой ток – Низкая входная ёмкость – Светочувствительная зона: φ5 мм.
-
Матрица PIN-фотодиодов InGaAs G12430-016D1
Технические характеристики: Количество элементов — 16. Корпус — керамический. Охлаждение — без охлаждения. Спектральный диапазон отклика — от 0.9 до 1.7 мкм. Пиковая длина волны чувствительности (тип.) — 1.55 мкм. Фоточувствительность (тип.) — 0.95 А/Вт. Темный ток (макс.) — 2.5 нА. Граничная частота (тип.) — 30 МГц. Ёмкость терминала (тип.) — 60 пФ. Условия измерения: Тa=25 ℃, если не указано иное.
-
Матрица фотодиодов InGaAs G6849-01 с PIN-структурой
Технические параметры: Фоточувствительная область φ1 мм, количество элементов 1 (квадрант), корпус металлический, категория TO-5, охлаждение без охлаждения. Диапазон спектральной чувствительности составляет от 0,9 до 1,7 мкм, пик чувствительности (тип.) 1,55 мкм, фоточувствительность (тип.) 0,95 А/Вт, максимальный темный ток 1,5 нА, частота среза (тип.) 120 МГц, емкость на клеммах (тип.) 25 пФ. Условия измерения: тип. Ta=25 ℃.
-
Матрица фотодиодов с усилителем S11865-256G
Размер изображения 51.2 x 0.3 мм Количество эффективных пикселей 256 Пиксельный размер 0.1 x 0.3 мм Питч пикселя 0.2 мм Напряжение питания 5 В Свинцовое покрытие Фосфорная пленка Пиковая длина волны чувствительности 720 нм Максимальная скорость считывания 3844 линии/с Емкость обратной связи зарядового усилителя 0.5 пФ Примечание для условий измерения рентгеновских лучей Тип. Ta=25 ℃
Фотодиоды
1 2
