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Si PIN-фотодиод S1223-01
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.52 A/W Dark current (max.) 10000 pA Cutoff frequency (typ.) 20 MHz Terminal capacitance (typ.) 20 […]
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Si PIN-фотодиод S13337-01
Технические характеристики Photosensitive area φ0.8 mm Number of elements 1 Package Glass epoxy Package category Surface mount type Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 800 nm Photosensitivity (typ.) 0.57 A/W Dark current (max.) 500 pA Cutoff frequency (typ.) 500 MHz Terminal capacitance (typ.) […]
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Si PIN-фотодиод S13993
Технические характеристики Photosensitive area 10 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 100 V Dark current (max.) 6000 pA Cutoff frequency (typ.) 40 MHz Terminal capacitance (typ.) 40 pF Measurement condition Typ. Ta=25 ℃, Dark current: VR=70 mV, Terminal capacitance: VR=70 V, f=10 kHz, unless otherwise noted
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Si PIN-фотодиод S14605
Технические характеристики Photosensitive area 9 × 9 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 150 V Dark current (max.) 30000 pA Cutoff frequency (typ.) 20 MHz Terminal capacitance (typ.) 25 pF Measurement condition Typ. Ta=25 ℃, Dark current: VR=100 mV, Terminal capacitance: VR=100 V, f=10 kHz, unless otherwise noted
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Si PIN-фотодиод S15137
Технические характеристики Photosensitive area φ5.0 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 150 V Spectral response range 360 to 1120 nm Peak sensitivity wavelength (typ.) 1000 nm Photosensitivity (typ.) 0.57 A/W Dark current (max.) 10000 pA Rise time (typ.) 0.0125 μs Terminal capacitance (typ.) 10 pF Measurement […]
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Si PIN-фотодиод S2744-09
Технические характеристики Photosensitive area 20 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 100 V Spectral response range 340 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.66 A/W Dark current (max.) 10000 pA Cutoff frequency (typ.) 25 MHz Terminal capacitance (typ.) 85 pF Noise equivalent […]
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Si PIN-фотодиод S3071
Технические характеристики Photosensitive area φ5 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 50 V Spectral response range 320 to 1060 nm Peak sensitivity wavelength (typ.) 920 nm Photosensitivity (typ.) 0.54 A/W Dark current (max.) 10000 pA Cutoff frequency (typ.) 40 MHz Terminal capacitance (typ.) 18 pF Noise […]
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Si PIN-фотодиод S3399
Технические характеристики Photosensitive area φ3 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 840 nm Photosensitivity (typ.) 0.58 A/W Dark current (max.) 1000 pA Cutoff frequency (typ.) 100 MHz Terminal capacitance (typ.) 20 pF Noise […]
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Si PIN-фотодиод S3590-19
Технические характеристики Photosensitive area 10 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 100 V Spectral response range 340 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.58 A/W Dark current (max.) 10000 pA Cutoff frequency (typ.) 40 MHz Terminal capacitance (typ.) 40 pF Noise equivalent […]
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Si PIN-фотодиод S6967
Технические характеристики Photosensitive area 5.5 × 4.8 mm Number of elements 1 Package Plastic Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1060 nm Peak sensitivity wavelength (typ.) 900 nm Photosensitivity (typ.) 0.65 A/W Dark current (max.) 5000 pA Cutoff frequency (typ.) 50 MHz Terminal capacitance (typ.) 50 pF Noise equivalent […]
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Si PIN-фотодиод S7509
Технические характеристики Photosensitive area 10 × 2 mm Number of elements 1 Package Ceramic Package category Surface mount type Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.72 A/W Dark current (max.) 5000 pA Cutoff frequency (typ.) 20 MHz Terminal capacitance […]
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Si PIN-фотодиод S9055
Технические характеристики Photosensitive area φ0.2 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 700 nm Photosensitivity (typ.) 0.25 A/W Dark current (max.) 100 pA Cutoff frequency (typ.) 1500 MHz Terminal capacitance (typ.) 0.8 pF Measurement […]
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Si PIN-фотодиод S9055-01
Технические характеристики Photosensitive area φ0.1 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 700 nm Photosensitivity (typ.) 0.25 A/W Dark current (max.) 100 pA Cutoff frequency (typ.) 2000 MHz Terminal capacitance (typ.) 0.5 pF Measurement […]
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Si PIN-фотодиод S9195
Технические характеристики Photosensitive area 5 × 5 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 840 nm Photosensitivity (typ.) 0.28 A/W Dark current (max.) 5000 pA Cutoff frequency (typ.) 50 MHz Terminal capacitance (typ.) 60 […]
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Si фотодиод S1226-18BQ
Технические характеристики Photosensitive area 1.1 × 1.1 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 2 pA Rise time (typ.) 0.15 μs Terminal capacitance (typ.) 35 […]
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Si фотодиод S1226-44BQ
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 10 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 500 […]
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Si фотодиод S1226-8BQ
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 20 pA Rise time (typ.) 2 μs Terminal capacitance (typ.) 1200 […]
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Si фотодиод S1227-1010BQ
Технические характеристики Photosensitive area 10 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 50 pA Rise time (typ.) 7 μs Terminal capacitance (typ.) 3000 pF Noise equivalent […]
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Si фотодиод S1227-16BQ
Технические характеристики Photosensitive area 5.9 × 1.1 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 5 pA Rise time (typ.) 0.5 μs Terminal capacitance (typ.) 170 pF Noise equivalent […]
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Si фотодиод S1227-66BR
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 340 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.43 A/W Dark current (max.) 20 pA Rise time (typ.) 2 μs Terminal capacitance (typ.) 950 pF Noise equivalent […]
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Si фотодиод S12497
Технические характеристики Photosensitive area 9.5 × 9.5 mm Number of elements 1 Package PWB with pins Cooling Non-cooled Reverse voltage (max.) 10 V Spectral response range 400 to 1100 nm Peak sensitivity wavelength (typ.) 920 nm Photosensitivity (typ.) 0.57 A/W Dark current (max.) 200 pA Rise time (typ.) 15 μs Terminal capacitance (typ.) 950 pF […]
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Si фотодиод S12698
Технические характеристики Photosensitive area 1.1 × 1.1 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 800 nm Photosensitivity (typ.) 0.38 A/W Dark current (max.) 10 pA Rise time (typ.) 0.1 μs Terminal capacitance (typ.) 25 […]
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Si фотодиод S12698-01
Технические характеристики Photosensitive area 2.4 × 2.4 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 800 nm Photosensitivity (typ.) 0.38 A/W Dark current (max.) 30 pA Rise time (typ.) 0.5 μs Terminal capacitance (typ.) 230 […]
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Si фотодиод S12742-220
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 216 to 224 nm Peak sensitivity wavelength (typ.) 220 nm Photosensitivity (typ.) 0.006 A/W Dark current (max.) 25 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 500 pF Noise equivalent […]
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Si фотодиод S12742-254
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 252 to 256 nm Peak sensitivity wavelength (typ.) 254 nm Photosensitivity (typ.) 0.018 A/W Dark current (max.) 25 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 500 pF Noise equivalent […]
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Si фотодиод S12915-1010R
Технические характеристики
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Si фотодиод S1336-44BQ
Технические характеристики Photosensitive area 3.6 × 3.6 mm Number of elements 1 Package Metal Package category TO-5 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 50 pA Rise time (typ.) 0.5 μs Terminal capacitance (typ.) 150 […]
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Si фотодиод S1336-8BQ
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 100 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 380 […]
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Si фотодиод S1337-1010BQ
Технические характеристики Photosensitive area 10 × 10 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 200 pA Rise time (typ.) 3 μs Terminal capacitance (typ.) 1100 pF Noise equivalent […]
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Si фотодиод S1337-66BQ
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 100 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 380 pF Noise equivalent […]
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Si фотодиод S8193
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Ceramic Cooling Non-cooled Reverse voltage (max.) 5 V Dark current (max.) 50 pA Terminal capacitance (typ.) 950 pF
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Si фотодиод с предусилителем S8745-01
Технические характеристики Photosensitive area 2.4 × 2.4 mm Number of elements 1 Package Metal Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 190 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Noise equivalent power (typ.) 11×10-15 W/Hz1/2 Measurement condition Typ. Ta=25 ℃, VCC=±15 V, RL=1 MΩ, Photosensitivity: λ=λp, Noise equivalent power: λ=λp, […]
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Si фотодиод с предусилителем S8745-06
Технические характеристики Photosensitive area 2.4 × 2.4 mm Number of elements 1 Package Metal Cooling Non-cooled Reverse voltage (max.) 20 V Spectral response range 340 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Noise equivalent power (typ.) 8×10-15 W/Hz1/2 Measurement condition Typ. Ta=25 ℃, VCC=±15 V, RL=1 MΩ, Photosensitivity: λ=λp, Noise equivalent power: λ=λp, […]
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Si фотодиод С1226-8БК
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 320 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 20 pA Rise time (typ.) 2 μs Terminal capacitance (typ.) 1200 […]
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Si фотодиод С1336-18БК
Технические характеристики Photosensitive area 1.1 × 1.1 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 20 pA Rise time (typ.) 0.1 μs Terminal capacitance (typ.) 20 […]
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Si фотодиод С1336-8БК
Технические характеристики Photosensitive area 5.8 × 5.8 mm Number of elements 1 Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.5 A/W Dark current (max.) 100 pA Rise time (typ.) 1 μs Terminal capacitance (typ.) 380 […]
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Si фотодиод С2386-18Л
Технические характеристики Photosensitive area 1.1 × 1.1 mm Number of elements 1 Package Metal Package category TO-18, with lens Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.6 A/W Dark current (max.) 2 pA Rise time (typ.) 0.4 μs Terminal capacitance […]
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Si фотодиод С2387-16Р
Технические характеристики
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Si фотодиод С2387-33Р
Технические характеристики
