| Номер запчасти | IRF360 |
| Производитель | International Rectifier |
| Краткое описание | 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
| Страниц | 8 шт. |
| Формат | |
| Размер | 145,25 kB |
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Absolute Maximum RatingsParameterUnits
I
D @ V
GS = 0V, T
C = 25°CContinuous Drain Current 2 5
I
D @ V
GS = 0V, T
C = 100°CContinuous Drain Current 1 6
I
DMPulsed Drain Current ➀100
P
D @ T
C = 25°CMax. Power Dissipation 3 0 0 W
Linear Derating Factor 2 . 4 W/°C
V
GSGate-to-Source Voltage ±20 V
E
ASSingle Pulse Avalanche Energy ➁980 mJ
I
ARAvalanche Current ➀25 A
E
ARRepetitive Avalanche Energy ➀30 mJ
dv/dtPeak Diode Recovery dv/dt ➂4.0
V/ns
T
JOperating Junction -55 to 150
T
STGStorage Temperature Range
Lead Temperature300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
PD - 90518
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
oC A
REPETITIVE AVALANCHE AND dv/dt RATED IRF360
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
01/24/01
www.irf.com1
400V, N-CHANNEL
TO-3 Product Summary
Part Number BVDSS R DS(on) ID
IRF360 400V 0.20Ω 25A
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
For footnotes refer to the last page - описание и принцип работы
